and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements compo.
1 SPB21N50C3 Maximum Ratings Parameter Drain Source voltage slope VDS = 400 V, ID = 21 A, Tj = 125 °C Symbol dv/dt Value 50 Unit V/ns Thermal Characteristics Parameter Thermal resistance, junction - case Thermal resistance, junction - case, FullPAK Thermal resistance, junction - ambient, leaded Thermal resistance, junction - ambient, FullPAK SMD version, device on PCB: @ min. footprint @ 6 cm 2 cooling area 3) Soldering temperature, reflow soldering, MSL1 1.6 mm (0.063 in.) from case for 10s 4) Electrical Characteristics, at Tj=25°C unless otherwise specified Parameter Symbol Conditions m.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 21N05L |
Siemens |
SPU21N05L | |
2 | 21N05L |
Infineon |
SPD21N05L | |
3 | 21N60 |
Inchange Semiconductor |
N-Channel MOSFET | |
4 | 21N60 |
IXYS Corporation |
IXFH21N60 | |
5 | 21N65M5 |
STMicroelectronics |
N-Channel MOSFET | |
6 | 21NAB06 |
SEMIKRON |
3-phase bridge rectifier braking chopper 3-phase bridge inverter | |
7 | 21NAB12 |
SEMIKRON |
3-phase bridge rectifier braking chopper 3-phase bridge inverter | |
8 | 21NF55 |
ETC |
COLOR TELEVISION SERVICE MANUAL | |
9 | 21NM50 |
UTC |
N-CHANNEL MOSFET | |
10 | 21NM60 |
UTC |
N-CHANNEL MOSFET | |
11 | 21NM65 |
UTC |
N-CHANNEL MOSFET | |
12 | 21-0117G |
DallasSemiconducotr |
PACKAGEOUTLINE/2x2UCSP |