1SV328 TOSHIBA Diode Silicon Epitaxial Planar Type 1SV328 VCO for UHF Band Radio · · · High capacitance ratio: C1 V/C4 V = 2.8 (typ.) Low series resistance: rs = 0.55 Ω (typ.) Useful for small size tuner. Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Reverse voltage Junction temperature Storage temperature range Symbol VR Tj Tstg Rating 10 125 -55~1.
rking to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used w.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 1SV322 |
Toshiba Semiconductor |
Silicon Diode | |
2 | 1SV323 |
Toshiba Semiconductor |
Silicon Diode | |
3 | 1SV324 |
Toshiba Semiconductor |
Silicon Diode | |
4 | 1SV325 |
Toshiba Semiconductor |
Silicon Diode | |
5 | 1SV329 |
Toshiba Semiconductor |
Silicon Diode | |
6 | 1SV302 |
Toshiba Semiconductor |
Variable Capacitance Diode | |
7 | 1SV303 |
Toshiba Semiconductor |
Variable Capacitance Diode | |
8 | 1SV304 |
Toshiba Semiconductor |
Variable Capacitance Diode | |
9 | 1SV305 |
Toshiba Semiconductor |
VARIABLE CAPACITANCD DIODE | |
10 | 1SV306 |
Toshiba Semiconductor |
VARIABLE CPACITANCE DIODE | |
11 | 1SV307 |
Toshiba Semiconductor |
Silicon diode | |
12 | 1SV308 |
Toshiba Semiconductor |
Diode |