TOSHIBA Diode Silicon Epitaxial Pin Type 1SV308 1SV308 VHF Tuner Band Switch Applications • Small package. • Low series resistance: rs = 1.1 Ω (typ.) • Small total capacitance: CT = 0.3 pF (typ.) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Reverse voltage Forward current Junction temperature Storage temperature range VR .
, etc). Electrical Characteristics (Ta = 25°C) Characteristics Reverse voltage Reverse current Forward voltage Total capacitance Series resistance 1 Series resistance 2 Symbol VR IR VF CT rs (1) rs (2) Test Condition IR = 10 μA VR = 30 V IF = 50 mA VR = 1 V, f = 1 MHz IF = 10 mA, f = 100 MHz IF = 10 mA, f = 1.5 GHz Marking Unit: mm JEDEC ― JEITA ― TOSHIBA 1-1G1A Weight: 0.0014 g (typ.) Min Typ. Max Unit 30 ⎯ ⎯ ⎯ ⎯ 0.1 ⎯ 0.95 1.0 ⎯ 0.3 0.5 ⎯ 1.0 1.5 ⎯ 1.1 ⎯ V μA V pF Ω Ω Start of commercial production 1997-04 1 2014-03-01 1SV308 2 2014-03-01 1SV308 RESTRICTIONS ON PRODUCT USE.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 1SV302 |
Toshiba Semiconductor |
Variable Capacitance Diode | |
2 | 1SV303 |
Toshiba Semiconductor |
Variable Capacitance Diode | |
3 | 1SV304 |
Toshiba Semiconductor |
Variable Capacitance Diode | |
4 | 1SV305 |
Toshiba Semiconductor |
VARIABLE CAPACITANCD DIODE | |
5 | 1SV306 |
Toshiba Semiconductor |
VARIABLE CPACITANCE DIODE | |
6 | 1SV307 |
Toshiba Semiconductor |
Silicon diode | |
7 | 1SV309 |
Toshiba Semiconductor |
Diode | |
8 | 1SV310 |
Toshiba Semiconductor |
Diode | |
9 | 1SV311 |
Toshiba Semiconductor |
Diode | |
10 | 1SV312 |
Toshiba Semiconductor |
Diode | |
11 | 1SV313 |
Toshiba Semiconductor |
Diode | |
12 | 1SV314 |
Toshiba Semiconductor |
Diode |