1SV325 - Toshiba Semiconductor

1SV325 Silicon Diode

TOSHIBA Diode Silicon Epitaxial Planar Type 1SV325 1SV325 TCXO/VCO • High capacitance ratio: C1V / C4V = 4.3 (typ.) • Low series resistance: rs = 0.4 Ω (typ.) • Useful for small size tuner. Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Reverse voltage Junction temperature Storage temperature range VR 10 V Tj 125 °C T.

Features

JEITA ― TOSHIBA 1-1G1A Weight: 0.0014 g (typ.) Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Reverse voltage Reverse current Capacitance Capacitance Capacitance ratio Series resistance VR IR C1V C4V C1V / C4V rs IR = 1 μA VR = 10 V VR = 1 V, f = 1 MHz VR = 4 V, f = 1 MHz ⎯ VR = 4 V, f = 100 MHz Note: Signal level when capacitance is measured: Vsig = 500 mVfms Marking Min Typ. Max Unit 10 ⎯ ⎯ V ⎯ ⎯ 3 nA 44 ⎯ 49.5 pF 9.2 ⎯ 12 pF 4 4.3 ⎯ ⎯ ⎯ 0.4 0.8 Ω Start of commercial production 1999-03 1 2014-03-01 1SV325 2 2014-03-01 1.