TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV303 CATV Tuning · High capacitance ratio: C2 V/C25 V = 17.5 (typ.) · Low series resistance: rs = 1.05 Ω (typ.) · Useful for small size tuner. Maximum Ratings (Ta = 25°C) Characteristics Reverse voltage Peak reverse voltage Junction temperature Storage temperature range Symbol VR VRM Tj T.
5 1.25 W
1 2003-03-24
1SV303
2 2003-03-24
1SV303
RESTRICTIONS ON PRODUCT USE
000707EAA
· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of hum.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 1SV302 |
Toshiba Semiconductor |
Variable Capacitance Diode | |
2 | 1SV304 |
Toshiba Semiconductor |
Variable Capacitance Diode | |
3 | 1SV305 |
Toshiba Semiconductor |
VARIABLE CAPACITANCD DIODE | |
4 | 1SV306 |
Toshiba Semiconductor |
VARIABLE CPACITANCE DIODE | |
5 | 1SV307 |
Toshiba Semiconductor |
Silicon diode | |
6 | 1SV308 |
Toshiba Semiconductor |
Diode | |
7 | 1SV309 |
Toshiba Semiconductor |
Diode | |
8 | 1SV310 |
Toshiba Semiconductor |
Diode | |
9 | 1SV311 |
Toshiba Semiconductor |
Diode | |
10 | 1SV312 |
Toshiba Semiconductor |
Diode | |
11 | 1SV313 |
Toshiba Semiconductor |
Diode | |
12 | 1SV314 |
Toshiba Semiconductor |
Diode |