Ordering number:ENN6262 Silicon Epitaxial Pin Diode 1SV316 Variabe resistance Attenuator Use Features · Ultrasmall-sized package facilitates high-density mounting and permits 1SV316-applied equipment to be made smaller. · Small interterminal capacitance (C=0.23pF typ). Electrical Connection Cathode / Anode 3 Package Dimensions unit:mm 1251A [1SV316] 0.5 0.
· Ultrasmall-sized package facilitates high-density mounting and permits 1SV316-applied equipment to be made smaller.
· Small interterminal capacitance (C=0.23pF typ). Electrical Connection
Cathode / Anode 3
Package Dimensions
unit:mm 1251A
[1SV316]
0.5
0.4 3 0.16 0 to 0.1
1 0.95 0.95 2 1.9 2.9
1 Anode 2 Cathode
0.5
1.5 2.5
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Reverse Voltage Forward Current Allowable Power Dissipation Junction Temperature Storage Temperature Symbol VR IF P Tj Tstg Conditions
1 : Anode 2 : Cathode 3 : Cathode/Anode SANYO : CP
0.8 1.1
Ratings 5.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 1SV310 |
Toshiba Semiconductor |
Diode | |
2 | 1SV311 |
Toshiba Semiconductor |
Diode | |
3 | 1SV312 |
Toshiba Semiconductor |
Diode | |
4 | 1SV313 |
Toshiba Semiconductor |
Diode | |
5 | 1SV314 |
Toshiba Semiconductor |
Diode | |
6 | 1SV315 |
Sanyo Semicon Device |
Silicon Epitaxial Pin Diode | |
7 | 1SV302 |
Toshiba Semiconductor |
Variable Capacitance Diode | |
8 | 1SV303 |
Toshiba Semiconductor |
Variable Capacitance Diode | |
9 | 1SV304 |
Toshiba Semiconductor |
Variable Capacitance Diode | |
10 | 1SV305 |
Toshiba Semiconductor |
VARIABLE CAPACITANCD DIODE | |
11 | 1SV306 |
Toshiba Semiconductor |
VARIABLE CPACITANCE DIODE | |
12 | 1SV307 |
Toshiba Semiconductor |
Silicon diode |