1SV312 - Toshiba Semiconductor

1SV312 Diode

TOSHIBA Diode Silicon Epitaxial Pin Type 1SV312 VHF~UHF Band RF Attenuator Applications · Two independent diodes mounted onto a 4-pin ultra compact package and it is suitable for high-density circuit design. · Low capacitance: CT = 0.25 pF (typ.) · Low series resistance: rs = 3 Ω (typ.) Maximum Ratings (Ta = 25°C) Characteristics Reverse voltage Forward c.

Features

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