1SV310 - Toshiba Semiconductor

1SV310 Diode

TOSHIBA Diode Silicon Epitaxial Planar Type 1SV310 1SV310 VCO for UHF Band Radio • High capacitance ratio: C1 V/C4 V = 2.1 (typ.) • Low series resistance: rs = 0.28 Ω (typ.) • Useful for small size tuner Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Reverse voltage Junction temperature Storage temperature range VR 10 V Tj.

Features

DEC ― JEITA ― TOSHIBA 1-1E1A Weight: 0.004 g (typ.) Electrical Characteristics (Ta = 25°C) Characteristics Reverse voltage Reverse current Capacitance Capacitance Capacitance ratio Series resistance Symbol Test Condition VR IR C1 V C4 V C1 V/C4 V rs IR = 1 μA VR = 10 V VR = 1 V, f = 1 MHz VR = 4 V, f = 1 MHz ⎯ VR = 1 V, f = 470 MHz Marking Min Typ. Max Unit 10 ⎯ ⎯ ⎯⎯ 3 9.7 ⎯ 11.1 4.45 ⎯ 5.45 1.8 2.1 ⎯ ⎯ 0.28 0.4 V nA pF pF ⎯ Ω 1 2007-11-01 1SV310 2 2007-11-01 1SV310 RESTRICTIONS ON PRODUCT USE
• Toshiba Corporation, and its subsidiaries and affiliates (collectively “T.