1SS88 Silicon Schottky Barrier Diode for CATV Balanced Mixer ADE-208-187A (Z) Rev. 1 Oct. 2000 Features • Low capacitance. (C = 0.97 pF max) • High reliability with glass seal. Ordering Information Type No. 1SS88 Cathode band White Mark H Package Code DO-35 Outline H 1 Cathode band 2 1. Cathode 2. Anode 1SS88 Absolute Maximum Ratings (Ta = 25°C) Item.
• Low capacitance. (C = 0.97 pF max)
• High reliability with glass seal.
Ordering Information
Type No. 1SS88 Cathode band White Mark H Package Code DO-35
Outline
H
1 Cathode band
2
1. Cathode 2. Anode
1SS88
Absolute Maximum Ratings
(Ta = 25°C)
Item Reverse voltage Peak forward current Average forward current Power dissipation Junction temperature Storage temperature Symbol VR IFM IO Pd Tj Tstg Value 10 35 15 150 100 −55 to +100 Unit V mA mA mW °C °C
Electrical Characteristics
(Ta = 25°C)
Item Forward voltage Symbol VF1 VF2 Reverse current IR1 IR2 Capacitance Capacitance deviation Forwa.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 1SS81 |
Hitachi Semiconductor |
Silicon Diode | |
2 | 1SS82 |
Hitachi Semiconductor |
Silicon Diode | |
3 | 1SS83 |
Hitachi Semiconductor |
Silicon Diode | |
4 | 1SS86 |
Hitachi Semiconductor |
Silicon Schottky Barrier Diode | |
5 | 1SS86 |
Renesas |
Silicon Schottky Barrier Diode | |
6 | 1SS101 |
XIN SEMICONDUCTOR |
SUPER HIGH SPEED SWITCHING DIODE | |
7 | 1SS101 |
NEC |
Mixer Diode | |
8 | 1SS104 |
Toshiba Semiconductor |
SILICON DIODE | |
9 | 1SS106 |
Hitachi Semiconductor |
Silicon Schottky Barrier Diode | |
10 | 1SS106 |
SEMTECH |
SILICON SCHOTTKY BARRIER DIODE | |
11 | 1SS106 |
Renesas |
Silicon Schottky Barrier Diode | |
12 | 1SS106 |
JINAN JINGHENG ELECTRONICS |
SMALL SIGNAL SCHOTTKY DIODES |