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1SS106 - Hitachi Semiconductor

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1SS106 Silicon Schottky Barrier Diode

1SS106 Silicon Schottky Barrier Diode for Various Detector, High Speed Switching ADE-208-153A (Z) Rev. 1 Oct. 1998 Features • Detection efficiency is very good. • Small temperature coefficient. • High reliability with glass seal. Ordering Information Type No. 1SS106 Cathode White 2nd band White Mark H Package Code DO-35 Outline H 1 2nd band Cathode band.

Features


• Detection efficiency is very good.
• Small temperature coefficient.
• High reliability with glass seal. Ordering Information Type No. 1SS106 Cathode White 2nd band White Mark H Package Code DO-35 Outline H 1 2nd band Cathode band 2 1. Cathode 2. Anode 1SS106 Absolute Maximum Ratings (Ta = 25°C) Item Reverse voltage Average rectified current Junction temperature Storage temperature Symbol VR IO Tj Tstg Value 10 30 125
  –55 to +125 Unit V mA °C °C Electrical Characteristics (Ta = 25°C) Item Forward current Reverse current Capacitance Rectifier efficiency ESD-Capability Notes: 1.
*1 Sym.

The same part from a different manufacturer

Datasheet 1SS106 - SEMTECH 1SS106

1SS106 SILICON SCHOTTKY BARRIER DIODE for various detector, high speed switching Features • Detection efficiency is very.

Datasheet 1SS106 - Renesas 1SS106

1SS106 Silicon Schottky Barrier Diode for Various Detector, High Speed Switching REJ03G0125-0200Z (Previous: ADE-208-153.

Datasheet 1SS106 - JINAN JINGHENG ELECTRONICS 1SS106

R SEMICONDUCTOR 1SS106 SMALL SIGNAL SCHOTTKY DIODES FEATURES Detection effciency is very good Small temperature coeff.

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