1SS86 - Hitachi Semiconductor

1SS86 Silicon Schottky Barrier Diode

To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, an.

Features

• Low capacitance. (C = 0.85 pF max)
• High reliability with glass seal. Ordering Information Type No. 1SS86 Cathode band White 2nd band White Mark H Package Code DO-35 Pin Arrangement H 1 2nd band Cathode band 2 1. Cathode 2. Anode 1SS86 Absolute Maximum Ratings (Ta = 25°C) Item Reverse voltage Average forward current Power dissipation Junction temperature Storage temperature Symbol VR IO Pd Tj Tstg Value 3 30 150 100 −55 to +100 Unit V mA mW °C °C Electrical Characteristics (Ta = 25°C) Item Forward current Reverse voltage Reverse current Capacitance ESD-Capability
* Symbol IF VR IR C.