1SS83 Silicon Epitaxial Planar Diode for High Voltage Switching ADE-208-150A (Z) Rev. 1 Jul. 1995 Features • High reverse voltage. (VR = 250V) • High reliability with glass seal. Ordering Information Type No. 1SS83 Cathode band Verdure 2nd band Light Blue 3rd band Light Blue Package Code DO-35 Outline 1 3rd band 2nd band Cathode band 2 1. Cathode 2. An.
• High reverse voltage. (VR = 250V)
• High reliability with glass seal.
Ordering Information
Type No. 1SS83 Cathode band Verdure 2nd band Light Blue 3rd band Light Blue Package Code DO-35
Outline
1 3rd band 2nd band Cathode band
2
1. Cathode 2. Anode
1SS83
Absolute Maximum Ratings
* 2 (Ta = 25°C)
Item Peak reverse voltage Reverse voltage Peak forward current Non-Repetitive peak forward surge current Average forward current Power dissipation Junction temperature Storage temperature Symbol VRM
* VR I FM I FSM
* IO Pd Tj Tstg
2 1
Value 300 250 625 1 200 400 175
–65 to +175
Unit V V mA A mA .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 1SS81 |
Hitachi Semiconductor |
Silicon Diode | |
2 | 1SS82 |
Hitachi Semiconductor |
Silicon Diode | |
3 | 1SS86 |
Hitachi Semiconductor |
Silicon Schottky Barrier Diode | |
4 | 1SS86 |
Renesas |
Silicon Schottky Barrier Diode | |
5 | 1SS88 |
Hitachi Semiconductor |
Silicon Schottky Barrier Diode | |
6 | 1SS101 |
XIN SEMICONDUCTOR |
SUPER HIGH SPEED SWITCHING DIODE | |
7 | 1SS101 |
NEC |
Mixer Diode | |
8 | 1SS104 |
Toshiba Semiconductor |
SILICON DIODE | |
9 | 1SS106 |
Hitachi Semiconductor |
Silicon Schottky Barrier Diode | |
10 | 1SS106 |
SEMTECH |
SILICON SCHOTTKY BARRIER DIODE | |
11 | 1SS106 |
Renesas |
Silicon Schottky Barrier Diode | |
12 | 1SS106 |
JINAN JINGHENG ELECTRONICS |
SMALL SIGNAL SCHOTTKY DIODES |