1SS336 - Toshiba Semiconductor

1SS336 Diode

TOSHIBA Diode Silicon Epitaxial Planar Type 1SS336 Ultra High Speed Switching Application 1SS336 Unit: mm z Small package : SC-59 z Low forward voltage : VF (3) = 0.84V (typ.) z Fast reverse recovery time : trr = 7ns (typ.) z Small total capacitance : CT = 7pF (typ.) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum .

Features

tc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
*: Unit rating. Total rating = unit rating × 1.5 Electrical Characteristics (Ta = 25°C) Characteristic Forward voltage Reverse current Total capacitance Reverse recovery time Symbol VF (1) VF (2) VF (3) IR (1) IR (2) CT trr Test Circuit Test Condition ― IF = 10mA ― IF = 100mA ― IF = 200.