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1SS120 Silicon Epitaxial Planar Diode for High Speed Switching ADE-208-167B (Z) Rev. 2 Aug. 1995 Features • Low capacitance. (C = 3.0pF max) • Short reverse recovery time. (trr = 3.5ns max) • Small glass package (MHD) enables easy mounting and high reliability. Ordering Information Type No. 1SS120 Cathode band Light Blue Mark 1 Package Code MHD Outline 1.
• Low capacitance. (C = 3.0pF max)
• Short reverse recovery time. (trr = 3.5ns max)
• Small glass package (MHD) enables easy mounting and high reliability.
Ordering Information
Type No. 1SS120 Cathode band Light Blue Mark 1 Package Code MHD
Outline
1
1 Cathode band
2
1. Cathode 2. Anode
1SS120
Absolute Maximum Ratings (Ta = 25°C)
Item Peak reverse voltage Reverse voltage Peak forward current Non-Repetitive peak forward surge current Average forward current Power dissipation Junction temperature Storage temperature Note: Within 1s forward surge current. Symbol VRM VR I FM I FSM
* IO Pd T.
1SS120 - EIC
www.eicsemi.com 1SS120 FEATURES : • High switching speed: max. 4 ns • Continuous reverse voltage:max. 80 V • Repetitive .
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 1SS123 |
NEC |
SILICON SWITCHING DIODE |
|
| 2 | 1SS101 |
XIN SEMICONDUCTOR |
SUPER HIGH SPEED SWITCHING DIODE |
|
| 3 | 1SS101 |
NEC |
Mixer Diode |
|
| 4 | 1SS104 |
Toshiba Semiconductor |
SILICON DIODE |
|
| 5 | 1SS106 |
Hitachi Semiconductor |
Silicon Schottky Barrier Diode |
|
| 6 | 1SS106 |
SEMTECH |
SILICON SCHOTTKY BARRIER DIODE |
|
| 7 | 1SS106 |
Renesas |
Silicon Schottky Barrier Diode |
|
| 8 | 1SS106 |
JINAN JINGHENG ELECTRONICS |
SMALL SIGNAL SCHOTTKY DIODES |
|
| 9 | 1SS108 |
Hitachi Semiconductor |
Silicon Schottky Barrier Diode |
|
| 10 | 1SS110 |
Hitachi Semiconductor |
Silicon Diode |
|
| 11 | 1SS110 |
Leshan Radio Company |
Switching Diode |
|
| 12 | 1SS118 |
Hitachi Semiconductor |
Silicon Epitaxial Planar Diode |
|