www.DataSheet4U.com 1SS118 Silicon Epitaxial Planar Diode for High Speed Switching ADE-208-297 (Z) Rev. 0 Features • High average forward current. (I O = 200mA) • High reliability with glass seal. Ordering Information Type No. 1SS118 Cathode band Black Mark S118 Package Code DO-35 Outline 1 S1 18 2 Type No. Cathode band 1. Cathode 2. Anode www.DataS.
• High average forward current. (I O = 200mA)
• High reliability with glass seal.
Ordering Information
Type No. 1SS118 Cathode band Black Mark S118 Package Code DO-35
Outline
1
S1 18
2
Type No. Cathode band 1. Cathode 2. Anode
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1SS118
Absolute Maximum Ratings (Ta = 25°C)
Item Peak reverse voltage Reverse voltage Peak forward current Non-Repetitive peak forward surge current Average forward current Power dissipation Junction temperature Storage temperature Note: Value at duration of 1µs Symbol VRM VR I FM I FSM
* IO Pd Tj Tstg Value 75 50 600 4 200 500 175
–65 to +175.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 1SS110 |
Hitachi Semiconductor |
Silicon Diode | |
2 | 1SS110 |
Leshan Radio Company |
Switching Diode | |
3 | 1SS119 |
Hitachi Semiconductor |
Silicon Diode | |
4 | 1SS119 |
Renesas |
Silicon Epitaxial Planar Diode | |
5 | 1SS101 |
XIN SEMICONDUCTOR |
SUPER HIGH SPEED SWITCHING DIODE | |
6 | 1SS101 |
NEC |
Mixer Diode | |
7 | 1SS104 |
Toshiba Semiconductor |
SILICON DIODE | |
8 | 1SS106 |
Hitachi Semiconductor |
Silicon Schottky Barrier Diode | |
9 | 1SS106 |
SEMTECH |
SILICON SCHOTTKY BARRIER DIODE | |
10 | 1SS106 |
Renesas |
Silicon Schottky Barrier Diode | |
11 | 1SS106 |
JINAN JINGHENG ELECTRONICS |
SMALL SIGNAL SCHOTTKY DIODES | |
12 | 1SS108 |
Hitachi Semiconductor |
Silicon Schottky Barrier Diode |