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1SS110 Silicon Epitaxial Planar Diode for Tuner Band Switch ADE-208-179B (Z) Rev. 2 Features • Low forward resistance. (r f = 0.9 Ω max) • Suitable for 5mm pitch high speed automatical insertion. • Small glass package (MHD) enables easy mounting and high reliability. Ordering Information Type No. 1SS110 Cathode band Verdure Package Code MHD Outline 1 Cat.
• Low forward resistance. (r f = 0.9 Ω max)
• Suitable for 5mm pitch high speed automatical insertion.
• Small glass package (MHD) enables easy mounting and high reliability.
Ordering Information
Type No. 1SS110 Cathode band Verdure Package Code MHD
Outline
1 Cathode band
2
1. Cathode 2. Anode
1SS110
Absolute Maximum Ratings (Ta = 25°C)
Item Reverse voltage Forward current Junction temperature Storage temperature Symbol VR IF Tj Tstg Value 35 100 175
–65 to +175 Unit V mA °C °C
Electrical Characteristics (Ta = 25°C)
Item Forward voltage Reverse voltage Reverse current Capacitance Forwar.
1SS110 - Leshan Radio Company
www.DataSheet4U.com Switching Diode *150mW DO-34 * Glass silicon switching diodes * We declare that the material of pro.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 1SS118 |
Hitachi Semiconductor |
Silicon Epitaxial Planar Diode |
|
| 2 | 1SS119 |
Hitachi Semiconductor |
Silicon Diode |
|
| 3 | 1SS119 |
Renesas |
Silicon Epitaxial Planar Diode |
|
| 4 | 1SS101 |
XIN SEMICONDUCTOR |
SUPER HIGH SPEED SWITCHING DIODE |
|
| 5 | 1SS101 |
NEC |
Mixer Diode |
|
| 6 | 1SS104 |
Toshiba Semiconductor |
SILICON DIODE |
|
| 7 | 1SS106 |
Hitachi Semiconductor |
Silicon Schottky Barrier Diode |
|
| 8 | 1SS106 |
SEMTECH |
SILICON SCHOTTKY BARRIER DIODE |
|
| 9 | 1SS106 |
Renesas |
Silicon Schottky Barrier Diode |
|
| 10 | 1SS106 |
JINAN JINGHENG ELECTRONICS |
SMALL SIGNAL SCHOTTKY DIODES |
|
| 11 | 1SS108 |
Hitachi Semiconductor |
Silicon Schottky Barrier Diode |
|
| 12 | 1SS120 |
Hitachi Semiconductor |
Silicon Diode |
|