This device is an N-channel Power MOSFET developed using MDmesh M2 technology. Thanks to its strip layout and an improved vertical structure, the device S(3) AM15572v1_no_tab exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters. Product status link STFU18N60M2 Produ.
3 12
TO-220FP ultra narrow leads
D(2)
Order code
V DS
RDS(on) max
ID
STFU18N60M2
600 V
0.280 Ω
13 A
• Extremely low gate charge
• Excellent output capacitance (COSS) profile
• 100% avalanche tested
• Zener-protected
Applications
• Switching applications
• LLC converters, resonant converters
G(1)
Description
This device is an N-channel Power MOSFET developed using MDmesh M2
technology. Thanks to its strip layout and an improved vertical structure, the device
S(3)
AM15572v1_no_tab exhibits low on-resistance and optimized switching characteristics, rendering it
suitable for the .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 18N60 |
Inchange Semiconductor |
N-Channel MOSFET | |
2 | 18N60 |
Unisonic Technologies |
N-Channel Power MOSFET | |
3 | 18N60-ML |
UTC |
N-CHANNEL POWER MOSFET | |
4 | 18N65 |
UNISONIC TECHNOLOGIES |
N-CHANNEL MOSFET | |
5 | 18N65M5 |
STMicroelectronics |
N-Channel Power MOSFET | |
6 | 18N10 |
Inchange Semiconductor |
N-Channel Mosfet Transistor | |
7 | 18N120BN |
Fairchild Semiconductor |
HGTG18N120BN | |
8 | 18N20 |
UTC |
N-CHANNEL POWER MOSFET | |
9 | 18N20 |
Inchange Semiconductor |
N-Channel Mosfet Transistor | |
10 | 18N20GH |
Advanced Power Electronics |
AP18N20GH | |
11 | 18N20GS |
Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
12 | 18N25 |
UNISONIC TECHNOLOGIES |
18A 250V N-CHANNEL POWER MOSFET |