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The UTC 18N50-MH is a high voltage power MOSFET combines advanced planar MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high speed switching applications of switching power supplies and adaptors. FEATURES * .
* RDS(ON) ≤ 0.3 Ω @ VGS=10V, ID=9.0A
* Fast switching capability
* Avalanche energy tested
* Improved dv/dt capability, high ruggedness
SYMBOL
Power MOSFET
ORDERING INFORMATION
Note:
Ordering Number
Lead Free
Halogen Free
Package
18N50L-TA3-T
18N50G-TA3-T
TO-220
18N50L-TF1-T
18N50G-TF1-T
TO-220F1
18N50L-TF2-T
18N50G-TF2-T
TO-220F2
18N50L-TF3-T
18N50G-TF3-T
TO-220F
Pin Assignment: G: Gate C: Collector E: Emitter
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
G
D
S
Packing
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1.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 18N50-C |
UTC |
N-CHANNEL MOSFET |
|
| 2 | 18N50 |
Inchange Semiconductor |
N-Channel Mosfet Transistor |
|
| 3 | 18N50 |
Unisonic Technologies |
N-CHANNEL MOSFET |
|
| 4 | 18N50 |
ON Semiconductor |
N-Channel MOSFET |
|
| 5 | 18N55M5 |
STMicroelectronics |
N-channel Power MOSFET |
|
| 6 | 18N10 |
Inchange Semiconductor |
N-Channel Mosfet Transistor |
|
| 7 | 18N120BN |
Fairchild Semiconductor |
HGTG18N120BN |
|
| 8 | 18N20 |
UTC |
N-CHANNEL POWER MOSFET |
|
| 9 | 18N20 |
Inchange Semiconductor |
N-Channel Mosfet Transistor |
|
| 10 | 18N20GH |
Advanced Power Electronics |
AP18N20GH |
|
| 11 | 18N20GS |
Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
|
| 12 | 18N25 |
UNISONIC TECHNOLOGIES |
18A 250V N-CHANNEL POWER MOSFET |
|