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18N120BN |
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| Part Number | 18N120BN |
| Manufacturer | Fairchild Semiconductor |
| Description | HGTG18N120BN Data Sheet December 2001 54A, 1200V, NPT Series N-Channel IGBT The HGTG18N120BN is a Non-Punch Through (NPT) IGBT design. This is a new member of the MOS gated high voltage switching IGB... |
| Features |
of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors. Formerly Developmental Type TA49288.
Features
• 54A, 1200V, TC = 25oC • 1200V Switching SOA Capability • Typical Fall Time . . . . . . . . . . . . . . . . 140ns at TJ = 150oC • Short Circuit Rating • Low Cond... |
| Document |
 18N120BN Data Sheet
PDF 146.01KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 18N10 |
Inchange Semiconductor |
N-Channel Mosfet Transistor |
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| 2 | 18N20 |
UTC |
N-CHANNEL POWER MOSFET |
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| 3 | 18N20 |
Inchange Semiconductor |
N-Channel Mosfet Transistor |
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| 4 | 18N20GH |
Advanced Power Electronics |
AP18N20GH |
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| 5 | 18N20GS |
Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
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