18N10 |
Part Number | 18N10 |
Manufacturer | Inchange Semiconductor |
Description | INCHANGE Semiconductor isc N-Channel MOSFET Transistor ·FEATURES ·Drain Current ID= 18A@ TC=25℃ ·Drain Source Voltage : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.14Ω(Max) ·Fast ... |
Features |
·Drain Current ID= 18A@ TC=25℃ ·Drain Source Voltage : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.14Ω(Max) ·Fast Switching ·APPLICATIONS ·Switch regulators ·Switching converters, motor drivers, relay drivers isc Product Specification 18N10 ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS VGS Drain-Source Voltage Gate-Source Voltage-Continuous 100 ±20 V V ID Drain Current-Continuous 18 A IDM Drain Current-Single Plused 45 A PD Total Dissipation @TC=25℃ 90 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ ... |
Document |
18N10 Data Sheet
PDF 61.98KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | 18N120BN |
Fairchild Semiconductor |
HGTG18N120BN | |
2 | 18N20 |
UTC |
N-CHANNEL POWER MOSFET | |
3 | 18N20 |
Inchange Semiconductor |
N-Channel Mosfet Transistor | |
4 | 18N20GH |
Advanced Power Electronics |
AP18N20GH | |
5 | 18N20GS |
Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET |