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isc N-Channel MOSFET Transistor ·FEATURES ·Drain Current ID= 15A@ TC=25℃ ·Drain Source Voltage- : VDSS= 450V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.4Ω(Max) ·Fast Switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching regulators ·Switching converters,motor drivers,relay drivers. .
·Drain Current ID= 15A@ TC=25℃
·Drain Source Voltage-
: VDSS= 450V(Min)
·Static Drain-Source On-Resistance
: RDS(on) = 0.4Ω(Max)
·Fast Switching
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS
·Switching regulators
·Switching converters,motor drivers,relay drivers.
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
450
V
VGS
Gate-Source Voltage-Continuous
±30
V
ID
Drain Current-Continuous
15
A
IDM
Drain Current-Single Plused
65
A
PD
Total Dissipation @TC=25℃
100
W
Tj
Max. Operatin.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 15N40 |
Unisonic Technologies |
400V N-CHANNEL POWER MOSFET |
|
| 2 | 15N40K-MT |
Unisonic Technologies |
N-CHANNEL POWER MOSFET |
|
| 3 | 15N03GH |
Advanced Power Electronics |
AP15N03GH |
|
| 4 | 15N03H |
Advanced Power Electronics |
AP15N03H |
|
| 5 | 15N03K |
Advanced Power Electronics |
AP15N03K |
|
| 6 | 15N03L |
Infineon Technologies AG |
IPP15N03L |
|
| 7 | 15N05 |
Inchange Semiconductor |
N-Channel Mosfet Transistor |
|
| 8 | 15N06 |
Inchange Semiconductor |
N-Channel Mosfet Transistor |
|
| 9 | 15N06 |
Unisonic Technologies |
60V N-CHANNEL POWER MOSFET |
|
| 10 | 15N10 |
Secos |
N-Ch Enhancement Mode Power MOSFET |
|
| 11 | 15N10 |
UTC |
100V (D-S) N-CHANNEL POWER MOSFET |
|
| 12 | 15N12 |
Inchange Semiconductor |
N-Channel Mosfet Transistor |
|