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The UTC 15N06 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON) ≤ 100 mΩ @ VGS=10V, ID=7.5A * Low capacitance * Low gate charge * Fast switching capability * Avalanche energy specified SYMBOL Power.
* RDS(ON) ≤ 100 mΩ @ VGS=10V, ID=7.5A
* Low capacitance
* Low gate charge
* Fast switching capability
* Avalanche energy specified
SYMBOL
Power MOSFET
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
Package
15N06L-TA3-T
15N06G-TA3-T
TO-220
15N06L-TF1-T
15N06G-TF1-T
TO-220F1
15N06L-TF2-T
15N06G-TF2-T
TO-220F2
15N06L-TF3-T
15N06G-TF3-T
TO-220F
15N06L-TM3-T
15N06G-TM3-T
TO-251
15N06L-TN3-T
15N06G-TN3-T
TO-252
15N06L-TN3-R
15N06G-TN3-R
TO-252
15N06L-S08-R
15N06G-S08-R
SOP-8
Note: Pin Assignment: G: Gate D: Drain S: Source
Pin Assignment 1234567 GDS -.
15N06 - Inchange Semiconductor
isc N-Channel MOSFET Transistor ·FEATURES ·Drain Current ID= 15A@ TC=25℃ ·Drain Source Voltage- : VDSS= 60V(Min) ·Stati.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 15N03GH |
Advanced Power Electronics |
AP15N03GH |
|
| 2 | 15N03H |
Advanced Power Electronics |
AP15N03H |
|
| 3 | 15N03K |
Advanced Power Electronics |
AP15N03K |
|
| 4 | 15N03L |
Infineon Technologies AG |
IPP15N03L |
|
| 5 | 15N05 |
Inchange Semiconductor |
N-Channel Mosfet Transistor |
|
| 6 | 15N10 |
Secos |
N-Ch Enhancement Mode Power MOSFET |
|
| 7 | 15N10 |
UTC |
100V (D-S) N-CHANNEL POWER MOSFET |
|
| 8 | 15N12 |
Inchange Semiconductor |
N-Channel Mosfet Transistor |
|
| 9 | 15N120A |
IXYS Corporation |
IXSH15N120A |
|
| 10 | 15N120NDA |
KEC |
KGH15N120NDA |
|
| 11 | 15N15 |
Inchange Semiconductor |
N-Channel Mosfet Transistor |
|
| 12 | 15N15-HC |
UTC |
N-CHANNEL POWER MOSFET |
|