The TO-252 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP15N03J) is available for low-profile applications. G D S TO-252(H) G D S TO-251(J) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ TS.
l Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value 4.8 110 Unit ℃/W ℃/W Data & specifications subject to change without notice 200227032 www.DataSheet4U.com www.DataSheet4U.com AP15N03H/J Electrical Characteristics@T j=25oC(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=250uA Min. 30 1 ` - Typ. 0.037 Max. Units 80 100 3 1 25 ±100 V V/℃ mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA RDS(ON) VGS(th) gfs IDSS IGSS Qg Q.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 15N03GH |
Advanced Power Electronics |
AP15N03GH | |
2 | 15N03H |
Advanced Power Electronics |
AP15N03H | |
3 | 15N03L |
Infineon Technologies AG |
IPP15N03L | |
4 | 15N05 |
Inchange Semiconductor |
N-Channel Mosfet Transistor | |
5 | 15N06 |
Inchange Semiconductor |
N-Channel Mosfet Transistor | |
6 | 15N06 |
Unisonic Technologies |
60V N-CHANNEL POWER MOSFET | |
7 | 15N10 |
Secos |
N-Ch Enhancement Mode Power MOSFET | |
8 | 15N10 |
UTC |
100V (D-S) N-CHANNEL POWER MOSFET | |
9 | 15N12 |
Inchange Semiconductor |
N-Channel Mosfet Transistor | |
10 | 15N120A |
IXYS Corporation |
IXSH15N120A | |
11 | 15N120NDA |
KEC |
KGH15N120NDA | |
12 | 15N15 |
Inchange Semiconductor |
N-Channel Mosfet Transistor |