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C=25°C Operating and storage temperature IEC climatic category; DIN IEC 68-1 Page 1 2003-01-17 IPP15N03L IPB15N03L Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 3) Symbol min. RthJC RthJA - Values typ. 1.2 max. 1.8 62 40 Unit K/W Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Static Characteristics Drain-source breakdown voltage V GS=0V, I D=1mA Symbol min. V(BR)DSS VGS(th) I DSS I GSS RDS(on) RDS(on) 30 1.2 Values typ. 1.6 max. 2 Unit V Gate .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 15N03GH |
Advanced Power Electronics |
AP15N03GH | |
2 | 15N03H |
Advanced Power Electronics |
AP15N03H | |
3 | 15N03K |
Advanced Power Electronics |
AP15N03K | |
4 | 15N05 |
Inchange Semiconductor |
N-Channel Mosfet Transistor | |
5 | 15N06 |
Inchange Semiconductor |
N-Channel Mosfet Transistor | |
6 | 15N06 |
Unisonic Technologies |
60V N-CHANNEL POWER MOSFET | |
7 | 15N10 |
Secos |
N-Ch Enhancement Mode Power MOSFET | |
8 | 15N10 |
UTC |
100V (D-S) N-CHANNEL POWER MOSFET | |
9 | 15N12 |
Inchange Semiconductor |
N-Channel Mosfet Transistor | |
10 | 15N120A |
IXYS Corporation |
IXSH15N120A | |
11 | 15N120NDA |
KEC |
KGH15N120NDA | |
12 | 15N15 |
Inchange Semiconductor |
N-Channel Mosfet Transistor |