isc N-Channel MOSFET Transistor ·FEATURES ·Drain Current ID= 15A@ TC=25℃ ·Drain Source Voltage- : VDSS= 150V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.15Ω(Max) ·Fast Switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching regulators ·Switching converters,motor drivers,relay drivers..
·Drain Current ID= 15A@ TC=25℃
·Drain Source Voltage-
: VDSS= 150V(Min)
·Static Drain-Source On-Resistance
: RDS(on) = 0.15Ω(Max)
·Fast Switching
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS
·Switching regulators
·Switching converters,motor drivers,relay drivers.
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
150
V
VGS
Gate-Source Voltage-Continuous
±30
V
ID
Drain Current-Continuous
15
A
IDM
Drain Current-Single Plused
40
A
PD
Total Dissipation @TC=25℃
100
W
Tj
Max. Operati.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 15N10 |
Secos |
N-Ch Enhancement Mode Power MOSFET | |
2 | 15N10 |
UTC |
100V (D-S) N-CHANNEL POWER MOSFET | |
3 | 15N12 |
Inchange Semiconductor |
N-Channel Mosfet Transistor | |
4 | 15N120A |
IXYS Corporation |
IXSH15N120A | |
5 | 15N120NDA |
KEC |
KGH15N120NDA | |
6 | 15N15-HC |
UTC |
N-CHANNEL POWER MOSFET | |
7 | 15N03GH |
Advanced Power Electronics |
AP15N03GH | |
8 | 15N03H |
Advanced Power Electronics |
AP15N03H | |
9 | 15N03K |
Advanced Power Electronics |
AP15N03K | |
10 | 15N03L |
Infineon Technologies AG |
IPP15N03L | |
11 | 15N05 |
Inchange Semiconductor |
N-Channel Mosfet Transistor | |
12 | 15N06 |
Inchange Semiconductor |
N-Channel Mosfet Transistor |