13005E - STMicroelectronics

13005E High voltage fast-switching NPN power transistor

This device is manufactured using high voltage multi epitaxial planar technology for high switching speeds and high voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining a wide RBSOA. Datasheet − production data 3 2 1 TO-220 Figure 1. Internal schematic diagram Table 1. Device su.

Features

■ Low spread of dynamic parameters
■ Minimum lot-to-lot spread for reliable operation
■ Very high switching speed Applications
■ Electronic ballast for fluorescent lighting
■ Switch mode power supplies Description This device is manufactured using high voltage multi epitaxial planar technology for high switching speeds and high voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining a wide RBSOA. Datasheet − production data 3 2 1 TO-220 Figure 1. Internal schematic diagram Table 1. Device summary Order code Marking.