These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE. FEATURES * VCES = 850 V * Reverse bias SOA with inductive loads @ TC = 100°С * Inductive switching matrix 2 to 4 Amp, 25 and 100°С tC @ 3A, 100°С is 180 ns (Typ) * 850V blockin.
* VCES = 850 V
* Reverse bias SOA with inductive loads @ TC = 100°С
* Inductive switching matrix 2 to 4 Amp, 25 and 100°С
tC @ 3A, 100°С is 180 ns (Typ)
* 850V blocking capability
* SOA and switching applications information
APPLICATIONS
* Switching regulator’s, inverters
* Motor controls
* Solenoid/Relay drivers
* Deflection circuits
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
13005ECL-x-TM3-T
13005ECG-x-TM3-T
13005ECL-x-T60-F-K
13005ECG-x-T60-F-K
Note: Pin Assignment: B: Base C: Collector E: Emitter
Package
TO-251 TO-126
Pin Assignment 123 BCE BCE
Packing
T.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 13005E |
STMicroelectronics |
High voltage fast-switching NPN power transistor | |
2 | 13005A |
ETC |
NPN SILICON TRANSISTOR | |
3 | 13005A |
STMicroelectronics |
High voltage fast-switching NPN power transistor | |
4 | 13005BA |
Unisonic Technologies |
NPN SILICON TRANSISTOR | |
5 | 13005C |
STMicroelectronics |
High voltage fast-switching NPN power transistor | |
6 | 13005D |
STMicroelectronics |
High voltage fast-switching NPN power transistor | |
7 | 13005D |
Jingdao |
NPN power transistor | |
8 | 13005DL |
Jingdao |
NPN power transistor | |
9 | 13005F |
STMicroelectronics |
High voltage fast-switching NPN power transistor | |
10 | 1300 |
Nihon Dempa Kogyo |
Crystal Clock Oscillators | |
11 | 1300-102-4xx |
Methode Electronics |
2.54mm IDC Connector | |
12 | 13001 |
Elite |
NPN Epitaxial Silicon Transistor |