13005E |
Part Number | 13005E |
Manufacturer | STMicroelectronics (https://www.st.com/) |
Description | This device is manufactured using high voltage multi epitaxial planar technology for high switching speeds and high voltage capability. It uses a cellular emitter structure with planar edge terminatio... |
Features |
■ Low spread of dynamic parameters ■ Minimum lot-to-lot spread for reliable operation ■ Very high switching speed Applications ■ Electronic ballast for fluorescent lighting ■ Switch mode power supplies Description This device is manufactured using high voltage multi epitaxial planar technology for high switching speeds and high voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining a wide RBSOA. Datasheet − production data 3 2 1 TO-220 Figure 1. Internal schematic diagram Table 1. Device summary Order code Marking... |
Document |
13005E Data Sheet
PDF 200.12KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
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1 | 13005A |
ETC |
NPN SILICON TRANSISTOR | |
2 | 13005A |
STMicroelectronics |
High voltage fast-switching NPN power transistor | |
3 | 13005BA |
Unisonic Technologies |
NPN SILICON TRANSISTOR | |
4 | 13005C |
STMicroelectronics |
High voltage fast-switching NPN power transistor | |
5 | 13005D |
STMicroelectronics |
High voltage fast-switching NPN power transistor |