These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE. FEATURES 1 * VCEO(SUS)= 800 V * Reverse bias SOA with inductive loads @ TC = 100°С * Inductive switching matrix 2 to 4 Amp, 25 and 100°С tC @ 3A, 100°С is 180 ns (Typ) * 800V b.
1
* VCEO(SUS)= 800 V
* Reverse bias SOA with inductive loads @ TC = 100°С
* Inductive switching matrix 2 to 4 Amp, 25 and 100°С
tC @ 3A, 100°С is 180 ns (Typ)
* 800V blocking capability
* SOA and switching applications information
APPLICATIONS
* Switching regulator’s, inverters
* Motor controls
* Solenoid/Relay drivers
* Deflection circuits
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
Package
13005BAL-T92-A-B
13005BAG-T92-A-B
TO-92
13005BAL-T92-A-K
13005BAG-T92-A-K
TO-92
13005BAL-T92-F-B
13005BAG-T92-F-B
TO-92
13005BAL-T92-F-K
13005BAG-T92-F-K
TO-92
Not.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 13005A |
ETC |
NPN SILICON TRANSISTOR | |
2 | 13005A |
STMicroelectronics |
High voltage fast-switching NPN power transistor | |
3 | 13005C |
STMicroelectronics |
High voltage fast-switching NPN power transistor | |
4 | 13005D |
STMicroelectronics |
High voltage fast-switching NPN power transistor | |
5 | 13005D |
Jingdao |
NPN power transistor | |
6 | 13005DL |
Jingdao |
NPN power transistor | |
7 | 13005E |
STMicroelectronics |
High voltage fast-switching NPN power transistor | |
8 | 13005EC |
Unisonic Technologies |
NPN SILICON TRANSISTOR | |
9 | 13005F |
STMicroelectronics |
High voltage fast-switching NPN power transistor | |
10 | 1300 |
Nihon Dempa Kogyo |
Crystal Clock Oscillators | |
11 | 1300-102-4xx |
Methode Electronics |
2.54mm IDC Connector | |
12 | 13001 |
Elite |
NPN Epitaxial Silicon Transistor |