The device is manufactured using high voltage multi-epitaxial planar technology for high switching speeds and high voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. SC06960r E(1) Part number ST13003 ST13003-K Marking 13003 13003 Table 1. Device summary Pack.
• High voltage capability
• Low spread of dynamic parameters
• Very high switching speed
Applications
• Electronic ballast for fluorescent lighting (CFL)
• SMPS for battery charger
Description
The device is manufactured using high voltage multi-epitaxial planar technology for high switching speeds and high voltage capability.
It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA.
SC06960r
E(1)
Part number ST13003 ST13003-K
Marking 13003 13003
Table 1. Device summary Package SOT-32 SOT-32
June 2013
This is informatio.
13003 NPN Epitaxial Silicon Transistor TO-220 HIGH VOLTAGE SWITCHING APPLICATIONS Collector-Emitter Voltage: VCEO=400V .
13003 STANDARD · · 65 HSiN 13003 PEFORMANCE CURVES 1 Ic(A) SOA (DC) 120 100 % Pc Tj 0.1 80 IS/B 60 Ptot 0..
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 1300 |
Nihon Dempa Kogyo |
Crystal Clock Oscillators | |
2 | 1300-102-4xx |
Methode Electronics |
2.54mm IDC Connector | |
3 | 13001 |
Elite |
NPN Epitaxial Silicon Transistor | |
4 | 13001-2 |
Jingdao |
NPN power transistor | |
5 | 13001-A |
Jingdao |
NPN power transistor | |
6 | 13001S |
ETC |
Low-frequency amplification environment rated bipolar transistors | |
7 | 13001S8D |
JTD |
NPN Transistor | |
8 | 13002AG |
Unisonic Technologies |
NPN SILICON TRANSISTOR | |
9 | 13002AH |
Unisonic Technologies |
NPN SILICON TRANSISTOR | |
10 | 13003AD |
Jingdao |
Bipolar Junction Transistor | |
11 | 13003ADA |
Unisonic Technologies |
NPN SILICON TRANSISTOR | |
12 | 13003ADG |
Unisonic Technologies |
NPN SILICON TRANSISTOR |