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13003 - STMicroelectronics

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13003 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

The device is manufactured using high voltage multi-epitaxial planar technology for high switching speeds and high voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. SC06960r E(1) Part number ST13003 ST13003-K Marking 13003 13003 Table 1. Device summary Pack.

Features


• High voltage capability
• Low spread of dynamic parameters
• Very high switching speed Applications
• Electronic ballast for fluorescent lighting (CFL)
• SMPS for battery charger Description The device is manufactured using high voltage multi-epitaxial planar technology for high switching speeds and high voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. SC06960r E(1) Part number ST13003 ST13003-K Marking 13003 13003 Table 1. Device summary Package SOT-32 SOT-32 June 2013 This is informatio.

The same part from a different manufacturer

Datasheet 13003 - Elite Enterprises 13003

13003 NPN Epitaxial Silicon Transistor TO-220 HIGH VOLTAGE SWITCHING APPLICATIONS Collector-Emitter Voltage: VCEO=400V .

Datasheet 13003 - HSiN 13003

13003 STANDARD · · 65 HSiN 13003 PEFORMANCE CURVES 1 Ic(A) SOA (DC) 120 100 % Pc Tj 0.1 80 IS/B 60 Ptot 0..

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