These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V applications in switch mode. FEATURES * Reverse biased SOA with inductive load @ TC=100°C * Inductive switching matrix 0.5 ~ 1.5 Amp, 25 and 100°C Typical tC = 290ns @ 1A, 100°C. * 700V blocki.
* Reverse biased SOA with inductive load @ TC=100°C
* Inductive switching matrix 0.5 ~ 1.5 Amp, 25 and 100°C
Typical tC = 290ns @ 1A, 100°C.
* 700V blocking capability
APPLICATIONS
* Switching regulator’s, inverters
* Motor controls
* Solenoid/relay drivers
* Deflection circuits
EQUIVALENT CIRCUIT
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
13003ADGL-TM3-T
13003ADGP-TM3-T
13003ADGL-T60-F-K
13003ADGP-T60-F-K
13003ADGL-T92-F-B
13003ADGP-T92-F-B
13003ADGL-T92-F-K
13003ADGP-T92-F-K
Note: Pin Assignment: B: Base C: Collector E: Emitter
Package
TO-251 TO-126 TO-92.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 13003AD |
Jingdao |
Bipolar Junction Transistor | |
2 | 13003ADA |
Unisonic Technologies |
NPN SILICON TRANSISTOR | |
3 | 13003 |
STMicroelectronics |
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR | |
4 | 13003 |
Elite Enterprises |
NPN Epitaxial Silicon Transistor | |
5 | 13003 |
HSiN |
HIGH VOLTAGE AND HIGH SPEED SWITCH | |
6 | 13003BDG |
Unisonic Technologies |
NPN SILICON TRANSISTOR | |
7 | 13003BR |
ETC |
MJE13003BR | |
8 | 13003BS |
Unisonic Technologies |
NPN SILICON TRANSISTOR | |
9 | 13003CDH |
Unisonic Technologies |
NPN SILICON TRANSISTOR | |
10 | 13003DE |
Unisonic Technologies |
NPN SILICON TRANSISTOR | |
11 | 13003DF |
Unisonic Technologies |
NPN SILICON TRANSISTOR | |
12 | 13003DH |
Unisonic Technologies |
NPN SILICON TRANSISTOR |