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R www.jdsemi.cn ShenZhen Jingdao Electronic Co.,Ltd. 13003AD Bipolar Junction Transistor ◆Si NPN ◆RoHS COMPLIANT 1．APPLICATION Fluorescent Lamp、Electronic Ballast、 and Switch-mode power supplies 2．FEATURES High voltage capability Intergrated antiparallel collector-emitter diode Features of good high temperature High switching speed 3．PACKAGE 1 VD TO.
High voltage capability Intergrated antiparallel collector-emitter diode Features of good high temperature High switching speed 3．PACKAGE 1 VD TO-220 4．Electrical Characteristics 4.1 Absolute Maximum Ratings 1 Base(B) 2 Collector(C) 3 Emitter(E) Tamb= 25℃ unless specified PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage Collector-Emittor Voltage Emittor- Base Voltage Collector Current Power Dissipation Ta=25℃ Tc=25℃ Junction Temperature Storage Temperature 4.2 Electrical Parameter Tamb= 25℃ unless specified PARAMETER SYMBOL Collector-Base Voltage Collector-Emittor Voltage.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 13003ADA |
Unisonic Technologies |
NPN SILICON TRANSISTOR |
|
| 2 | 13003ADG |
Unisonic Technologies |
NPN SILICON TRANSISTOR |
|
| 3 | 13003 |
STMicroelectronics |
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR |
|
| 4 | 13003 |
Elite Enterprises |
NPN Epitaxial Silicon Transistor |
|
| 5 | 13003 |
HSiN |
HIGH VOLTAGE AND HIGH SPEED SWITCH |
|
| 6 | 13003BDG |
Unisonic Technologies |
NPN SILICON TRANSISTOR |
|
| 7 | 13003BR |
ETC |
MJE13003BR |
|
| 8 | 13003BS |
Unisonic Technologies |
NPN SILICON TRANSISTOR |
|
| 9 | 13003CDH |
Unisonic Technologies |
NPN SILICON TRANSISTOR |
|
| 10 | 13003DE |
Unisonic Technologies |
NPN SILICON TRANSISTOR |
|
| 11 | 13003DF |
Unisonic Technologies |
NPN SILICON TRANSISTOR |
|
| 12 | 13003DH |
Unisonic Technologies |
NPN SILICON TRANSISTOR |
|