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13001S8D |
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| Part Number | 13001S8D |
| Manufacturer | JTD |
| Description | SHENZHEN JTD ELECTRONICS CO.,LTD 13001S8D FEATURES TO-92 Plastic-Encapsulate Transistors TRANSISTOR(NPN) Power switching applications TO-92 LIMMITING VALUES(Tj=25℃ Unless Otherwise Stated) Param... |
| Features |
TO-92 Plastic-Encapsulate Transistors
TRANSISTOR(NPN)
Power switching applications
TO-92
LIMMITING VALUES(Tj=25℃ Unless Otherwise Stated)
Parameter
Symbol Value
Unit
Collector-Base Voltage
VCBO
600
V
Collector-Emitter Voltage
VCEO
400
V
Emitter-Base Voltage
VEBO
7
V
Collector Current
Ic
0.5
A
Total Power Dissipattion
Pc
0.65
W
Storage Temperature
Tstg -65~150
℃
Junction Temperature
Tj
150
℃
1. EMITTER 2. COLLECTOR 3. BASE
ELECTRICAL CHARACTERISTICS （Tj=25℃ Unless Otherwise Stated）
Parameter
Symbol
Test conditions
Min
Collector-Base Breakdown Voltage Col... |
| Document |
 13001S8D Data Sheet
PDF 60.87KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 13001S |
ETC |
Low-frequency amplification environment rated bipolar transistors |
|
| 2 | 13001 |
Elite |
NPN Epitaxial Silicon Transistor |
|
| 3 | 13001-2 |
Jingdao |
NPN power transistor |
|
| 4 | 13001-A |
Jingdao |
NPN power transistor |
|
| 5 | 1300 |
Nihon Dempa Kogyo |
Crystal Clock Oscillators |
|