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RJK2017DPP-M0 |
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| Part Number | RJK2017DPP-M0 |
| Manufacturer | Renesas (https://www.renesas.com/) |
| Description | of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for th... |
| Features |
Low on-resistance RDS(on) = 0.036 typ. (at ID = 22.5 A, VGS = 10 V, Ta = 25C) Low leakage current High speed switching Outline RENESAS Package code: PRSS0003AF-A (Package name: TO-220FL) 1 23 G Absolute Maximum Ratings Item Symbol Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation VDSS VGSS ID Note4 ID (pulse) Note1 IDR IAP Note3 EAR Note3 Pch Note2 Channel to case thermal impedance ch-c Channel temperature Tch Storage temperature Tstg Notes: 1. PW ... |
| Document |
 RJK2017DPP-M0 Data Sheet
PDF 74.72KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | RJK2017DPP |
Renesas |
N-Channel Power MOSFET |
|
| 2 | RJK2006DPE |
Renesas Technology |
Silicon N-Channel MOSFET |
|
| 3 | RJK2006DPE |
INCHANGE |
N-Channel MOSFET |
|
| 4 | RJK2006DPF |
Renesas Technology |
Silicon N Channel MOS FET High Speed Power Switching |
|
| 5 | RJK2006DPJ |
Renesas Technology |
Silicon N Channel MOS FET High Speed Power Switching |
|