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TSA24N50M |
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| Part Number | TSA24N50M |
| Manufacturer | Truesemi |
| Description | This Power MOSFET is produced using True semi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switchin... |
| Features |
- 24A, 500V, RDS(on) = 0.2Ω@VGS = 10 V - Low gate charge ( typical 90nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability
D
GDS
TO-3P
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol VDSS
ID
IDM VGSS EAS IAR EAR dv/dt
PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current Drain Current
- Continuous (TC = 25℃) - Continuous (TC = 100℃) - Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dis... |
| Document |
 TSA24N50M Data Sheet
PDF 271.64KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | TSA24N50MR |
Truesemi |
N-Channel MOSFET |
|
| 2 | TSA20N50M |
Truesemi |
500V N-Channel MOSFET |
|
| 3 | TSA20N60S |
Truesemi |
N-Channel MOSFET |
|
| 4 | TSA23N50M |
Truesemi |
N-Channel MOSFET |
|
| 5 | TSA-213244 |
TELEDYNE |
40 WATTS HIGH POWER GaN AMPLIFIER |
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