PXFC192207SH |
Part Number | PXFC192207SH |
Manufacturer | Infineon (https://www.infineon.com/) |
Description | The PXFC192207SH is a 220-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to 1990 MHz frequency band. Features include input and output matching, hi... |
Features |
include input and output matching, high gain and thermally-enhanced package with earless flanges. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability.
PXFC192207SH Package H-37288G-4/2
Gain (dB) Efficiency (%)
Two-carrier WCDMA Drive-up VDD = 28 V, IDQ = 1600 mA, VGS = 2.75 V,
ƒ = 1880 MHz, 3GPP WCDMA signal, PAR = 8 dB, 10 MHz carrier spacing,
BW 3.84 MHz
22
56
21 Gain 48 20 40
19 32
18 24
17 16
16
Efficiency
8
15 29
c192207sh_g1
0
33 37 41 45 49 53
Output Power (dBm)
Features
• Broadband internal ... |
Document |
PXFC192207SH Data Sheet
PDF 351.94KB |
Distributor | Stock | Price | Buy |
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No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | PXFC192207FH |
Infineon |
Thermally-Enhanced High Power RF LDMOS FET | |
2 | PXFC192207FH |
Wolfspeed |
Thermally-Enhanced High Power RF LDMOS FET | |
3 | PXFC192207NF |
Infineon |
Thermally-Enhanced High Power RF LDMOS FET | |
4 | PXFC191507FC |
MACOM |
150W High Power RF LDMOS FET | |
5 | PXFC191507FC |
Infineon |
Thermally-Enhanced High Power RF LDMOS FET |