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FDD86110 |
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| Part Number | FDD86110 |
| Manufacturer | Fairchild Semiconductor |
| Description | Shielded Gate MOSFET Technology Max rDS(on) = 10.2 mΩ at VGS = 10 V, ID = 12.5 A Max rDS(on) = 16 mΩ at VGS = 6 V, ID = 9.8 A 100% UIL tested This N-Channel MOSFET is produced using Fairchil... |
| Features |
General Description
Shielded Gate MOSFET Technology Max rDS(on) = 10.2 mΩ at VGS = 10 V, ID = 12.5 A Max rDS(on) = 16 mΩ at VGS = 6 V, ID = 9.8 A 100% UIL tested
This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that
incorporates Shielded Gate technology. This process has been
optimized for the on-state resistance and yet maintain superior
switching performance.
RoHS Compliant
Application
DC - DC Conversion
D
G S
D
DT O-P-2A5K2 (T O -25 2)
G S
MOSFET Maximum Ratings TC = 25 °C unless otherwise noted
Symbol VDS VGS
ID
EAS PD ... |
| Document |
 FDD86110 Data Sheet
PDF 396.74KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | FDD86113LZ |
Fairchild Semiconductor |
N-Channel MOSFET |
|
| 2 | FDD86102 |
Fairchild Semiconductor |
N-Channel MOSFET |
|
| 3 | FDD86102LZ |
Fairchild Semiconductor |
N-Channel MOSFET |
|
| 4 | FDD86102LZ |
INCHANGE |
N-Channel MOSFET |
|
| 5 | FDD86069-F085 |
ON Semiconductor |
N-Channel Power MOSFET |
|