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1SV279 |
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| Part Number | 1SV279 |
| Manufacturer | Toshiba (https://www.toshiba.com/) Semiconductor |
| Description | TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV279 1SV279 VCO for V/UHF Band Radio • High capacitance ratio: C2V / C10V = 2.5 (typ.) • Low series resistance: rs = 0.2 Ω (typ.) ... |
| Features |
ilure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Reverse voltage Reverse current Capacitance Capacitance Capacitance ratio Series resistance
Symbol
Test Condition
VR IR C2V C10V C2V / C10V rs
IR = 1 μA VR = 15 V VR = 2 V, f = 1 MHz VR = 10 V, f = 1 MHz
⎯ VR = 5 V, f = 470 MHz
Marking
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
1-1G1A
Weight: 0.0014 g (typ.)
Min Typ. Max Unit
15
⎯
⎯
V
⎯
⎯
3
nA
14
⎯
16
pF
5.5
⎯
6.5
pF
2.0 2.5
⎯
⎯
⎯
0.2 0.4
Ω
Start of commercial production
1994-07
1
2014-03-01
1SV279
CAPACITANCE CHANGE RATIO δC (%) (Note)
N... |
| Document |
 1SV279 Data Sheet
PDF 164.58KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 1SV270 |
Toshiba Semiconductor |
Variable Capacitance Diode |
|
| 2 | 1SV271 |
Toshiba Semiconductor |
Silicon Diode |
|
| 3 | 1SV272 |
Sanyo Semicon Device |
PIN Diode |
|
| 4 | 1SV276 |
Toshiba Semiconductor |
Variable Capacitance Diode |
|
| 5 | 1SV277 |
Toshiba Semiconductor |
Variable Capacitance Diode |
|