1SV270 - Toshiba Semiconductor

1SV270 Variable Capacitance Diode

TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV270 1SV270 VCO for UHF Band Radio • High capacitance ratio: C1 V/C4 V = 2.0 (typ.) • Low series resistance: rs = 0.28 Ω (typ.) • Small package Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Reverse voltage Junction temperature Storage temperature range VR 1.

Features

rical Characteristics (Ta = 25°C) Characteristics Reverse voltage Reverse current Capacitance Capacitance Capacitance ratio Series resistance Symbol Test Condition VR IR C1 V C4 V C1 V/C4 V rs IR = 1 μA VR = 10 V VR = 1 V, f = 1 MHz VR = 4 V, f = 1 MHz ⎯ VR = 1 V, f = 470 MHz Marking Unit: mm JEDEC ― JEITA ― TOSHIBA 1-1E1A Weight: 0.004 g (typ.) Min Typ. Max Unit 10 ⎯ ⎯ ⎯⎯ 3 15 16 17 7.3 8.0 8.7 1.8 2.0 ⎯ ⎯ 0.28 0.5 V nA pF pF ⎯ Ω 1 2007-11-01 1SV270 (Note) Note: δC = C (Ta) − C C (25) (25) × 100 (%) 2 2007-11-01 1SV270 RESTRICTIONS ON PRODUCT USE
• Toshiba.