1SV276 - Toshiba Semiconductor

1SV276 Variable Capacitance Diode

TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV276 VCO for UHF Band Radio · High capacitance ratio: C1 V/C4 V = 2.0 (typ.) · Low series resistance: rs = 0.22 Ω (typ.) · Small package Maximum Ratings (Ta = 25°C) Characteristics Reverse voltage Junction temperature Storage temperature range Symbol VR Tj Tstg Rating 10 125 -55~125 Uni.

Features

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