1SV271 - Toshiba Semiconductor

1SV271 Silicon Diode

TOSHIBA Diode Silicon Epitaxial Pin Type 1SV271 1SV271 VHF to UHF Band RF Attenuator Applications • Useful for small size tuner • Small total capacitance: CT = 0.25 pF (typ.) • Low series resistance: rs = 3 Ω (typ.) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Reverse voltage Forward current Junction temperature Storage te.

Features

timated failure rate, etc). Electrical Characteristics (Ta = 25°C) Characteristics Reverse voltage Reverse current Forward voltage Total capacitance Series resistance Symbol VR IR VF CT rs Test Condition IR = 10 μA VR = 50 V IF = 50 mA VR = 50 V, f = 1 MHz IF = 10 mA, f = 100 MHz Marking Unit: mm JEDEC ― JEITA ― TOSHIBA 1-1E1A Weight: 0.004 g (typ.) Min Typ. Max Unit 50 ⎯ ⎯ ⎯ ⎯ 0.1 ⎯ 0.93 1.0 ⎯ 0.25 0.4 ⎯3⎯ V μA V pF Ω Start of commercial production 1993-06 1 2014-03-01 1SV271 2 2014-03-01 1SV271 RESTRICTIONS ON PRODUCT USE
• Toshiba Corporation, and its subsidiaries and aff.