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3SK233 |
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| Part Number | 3SK233 |
| Manufacturer | Hitachi Semiconductor |
| Description | 3SK233 Silicon N Channel Dual Gate MOS FET UHF TV Tuner RF Amplifier Feature • Low voltage operation. • Superior cross modulation characteristics. Table 1 Absolute Maximum Ratings (Ta = 25°C) Item ... |
| Features |
—————————————————————— – Gate 1 to source breakdown voltage V(BR)G1SS ±10 — — V IG1 = ±10 µA, VG2S = VDS = 0 ——————————————————————————————————————————————— – Gate 2 to source breakdown voltage V(BR)G2SS ±10 — — V IG2 = ±10 µA, VG1S = VDS = 0 ——————————————————————————————————————————————— – Gate 1 cutoff current IG1SS — — ±100 nA VG1S = ±8 V, VG2S = VDS = 0 ——————————————————————————————————————————————— – Gate 2 cutoff current IG2SS — — ±100 nA VG2S = ±8 V, VG1S = VDS = 0 ——————————————————————————————————————————————— – Drain current IDSS 0 — 2 mA VDS = 6 V, VG1S = 0, VG2S ... |
| Document |
 3SK233 Data Sheet
PDF 350.38KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 3SK231 |
NEC |
MOSFET |
|
| 2 | 3SK239A |
Hitachi Semiconductor |
GaAs Dual Gate MES FET |
|
| 3 | 3SK206 |
NEC |
RF AMP. FOR UHF TV TUNER N-CHANNEL GaAs DUAL GATE MES FIELD-EFFECT TRANSISTOR 4PIN MINI MOLD |
|
| 4 | 3SK207 |
Toshiba Semiconductor |
Silicon N Channel Dual Gate MOS Type FET |
|
| 5 | 3SK22 |
Toshiba |
Silicon N-Channel Transistor |
|