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IXBT6N170 |
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| Part Number | IXBT6N170 |
| Manufacturer | IXYS |
| Description | High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBH6N170 IXBT6N170 VCES = IC90 = VCE(sat) ≤ 1700V 6A 3.4V Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg... |
| Features |
z High blocking voltage z Integrated Anti-parallel diode z International standard packages z Low conduction losses
Advantages
z Low gate drive requirement z High power density
Applications:
z Switched-mode and resonant-mode power supplies
z Uninterruptible power supplies (UPS) z Laser generator z Capacitor discharge circuit z AC switches
© 2008 IXYS CORPORATION, All rights reserved
DS99004C(10/08)
Symbol
Test Conditions
(TJ = 25°C unless otherwise specified)
gfS IC = 6A, VCE = 10V, Note 1
Cies Coes Cres
VCE = 25V, VGE = 0V, f = 1MHz
Qg Qge IC = 6A, VGE = 15V, VCE = 0.5 • VCES Qgc td(... |
| Document |
 IXBT6N170 Data Sheet
PDF 174.36KB |
| Distributor | Stock | Price | Buy |
|---|
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|---|---|---|---|---|
| 1 | IXBT10N170 |
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