NP50P06SDG NEC MOS FIELD EFFECT TRANSISTOR Datasheet, en stock, prix

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NP50P06SDG

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NEC

NP50P06SDG

NP50P06SDG

NP50P06SDG

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Part Number	NP50P06SDG
Manufacturer	NEC
Description	The NP50P06SDG is P-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER NP50P06SDG-E1-AY Note NP50P06SDG-E2-AY Note LEAD PLATING P...
Features	• Super low on-state resistance RDS(on)1 = 16.5 mΩ MAX. (VGS = −10 V, ID = −25 A) RDS(on)2 = 23.0 mΩ MAX. (VGS = −4.5 V, ID = −25 A) • Low input capacitance Ciss = 5000 pF TYP. (TO-252) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) VDSS Gate to Source Voltage (VDS = 0 V) VGSS Drain Current (DC) (TC = 25°C) Drain Current (pulse) Note1 ID(DC) ID(pulse) Total Power Dissipation (TC = 25°C) PT1 Total Power Dissipation (TA = 25°C) PT2 Channel Temperature Tch Storage Temperature Single Avalanche Current Note2 Single Avalanche Energy Note2 Tstg IAS EAS ...
Document	NP50P06SDG Data Sheet PDF 235.80KB

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