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NP50P03YDG |
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| Part Number | NP50P03YDG |
| Manufacturer | Renesas (https://www.renesas.com/) |
| Description | The NP50P03YDG is P-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance ⎯ RDS(on) = 8.4 mΩ MAX. (VGS = −10 V, ID = −25 A) • Low Cis... |
| Features |
• Low on-state resistance ⎯ RDS(on) = 8.4 mΩ MAX. (VGS = −10 V, ID = −25 A) • Low Ciss: Ciss = 2300 pF TYP. (VDS = −25 V, VGS = 0 V) • Designed for automotive application and AEC-Q101 qualified • Small size package 8-pin HSON Ordering Information Part No. NP50P03YDG -E1-AY ∗1 NP50P03YDG -E2-AY ∗1 LEAD PLATING Pure Sn (Tin) PACKING Tape 2500 p/reel Note: ∗1. Pb-free (This product does not contain Pb in the external electrode.) Package 8-pin HSON, Taping (E1 type) 8-pin HSON, Taping (E2 type) |
| Document |
 NP50P03YDG Data Sheet
PDF 224.06KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | NP50P04KDG |
NEC |
MOS FIELD EFFECT TRANSISTOR |
|
| 2 | NP50P04SLG |
Renesas |
P-Channel Power MOSFET |
|
| 3 | NP50P06KDG |
NEC |
MOSFET |
|
| 4 | NP50P06KDG |
Renesas |
P-channel Power MOSFET |
|
| 5 | NP50P06SDG |
NEC |
MOS FIELD EFFECT TRANSISTOR |
|