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NP50P04SLG |
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| Part Number | NP50P04SLG |
| Manufacturer | Renesas (https://www.renesas.com/) |
| Description | This product is P-channel MOS Field Effect Transistor designed for high current switching applications. Features Super low on-state resistance : RDS(on) = 9.6 m Max. ( VGS = -10 V, ID = -25 A ) RDS... |
| Features |
Super low on-state resistance : RDS(on) = 9.6 m Max. ( VGS = -10 V, ID = -25 A ) RDS(on) = 15 m Max. ( VGS = -4.5 V, ID = -25 A ) Low input capacitance : Ciss = 3800 pF Typ. Built-in gate protection diode Designed for automotive application and AEC-Q101 qualified. Pb-free (This product does not contain Pb in the external electrode) Outline 4 Drain 1 2 3 1. Gate 2. Drain 3. Source 4. Drain(Fin) MP-3ZK (TO-252) Absolute Maximum Ratings Gate Source Equivalent circuit Item Symbol Ratings Drain to Source Voltage (VGS = 0 V) VDSS -40 Gate to Source Voltage (VDS = 0 V) VGSS ... |
| Document |
 NP50P04SLG Data Sheet
PDF 1.38MB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | NP50P04KDG |
NEC |
MOS FIELD EFFECT TRANSISTOR |
|
| 2 | NP50P03YDG |
Renesas |
MOS FIELD EFFECT TRANSISTOR |
|
| 3 | NP50P06KDG |
NEC |
MOSFET |
|
| 4 | NP50P06KDG |
Renesas |
P-channel Power MOSFET |
|
| 5 | NP50P06SDG |
NEC |
MOS FIELD EFFECT TRANSISTOR |
|