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NP50P06KDG |
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| Part Number | NP50P06KDG |
| Manufacturer | NEC |
| Description |
The NP50P06KDG is P-channel MOS Field Effect Transistor designed for high current switching applications. |
| Features |
• Super low on-state resistance RDS(on)1 = 17 mΩ MAX. (VGS = −10 V, ID = −25 A) RDS(on)2 = 23 mΩ MAX. (VGS = −4.5 V, ID = −25 A) • Low input capacitance Ciss = 5000 pF TYP. (TO-263) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25°C) Drain Current (pulse) Note1 VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg −60 m20 m50 m150 90 1.8 175 −55 to +175 32 106 V V A A W W °C °C A mJ Total Power Dissipation (TC = 25°C) Total Power Dissipation (TA = 25°C) Channel Temperature Storage Temperature Single Avalanche Cur... |
| Document |
 NP50P06KDG Data Sheet
PDF 204.69KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | NP50P06KDG |
Renesas |
P-channel Power MOSFET |
|
| 2 | NP50P06SDG |
NEC |
MOS FIELD EFFECT TRANSISTOR |
|
| 3 | NP50P03YDG |
Renesas |
MOS FIELD EFFECT TRANSISTOR |
|
| 4 | NP50P04KDG |
NEC |
MOS FIELD EFFECT TRANSISTOR |
|
| 5 | NP50P04SLG |
Renesas |
P-Channel Power MOSFET |
|