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STGW40S120DF3 |
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| Part Number | STGW40S120DF3 |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the S series of 1200 V IGBTs which is tailored to maximize efficiency of low freq... |
| Features |
• 10 µs of short-circuit withstand time • VCE(sat) = 1.65 V (typ.) @ IC = 40 A • Tight parameter distribution • Safer paralleling • Low thermal resistance • Soft and fast recovery antiparallel diode Applications • Industrial drives • UPS • Solar • Welding * ( Description This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the S series of 1200 V IGBTs which is tailored to maximize efficiency of low frequency industrial systems. Furthermore, a positive VCE(sat) temperature coefficient and tight parameter distribution r... |
| Document |
 STGW40S120DF3 Data Sheet
PDF 406.81KB |
| Distributor | Stock | Price | Buy |
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| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | STGW40H120DF2 |
STMicroelectronics |
Trench gate field-stop IGBT |
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| 2 | STGW40H65DFB |
STMicroelectronics |
IGBT |
|
| 3 | STGW40H65DFB-4 |
STMicroelectronics |
IGBT |
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| 4 | STGW40H65FB |
STMicroelectronics |
IGBT |
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| 5 | STGW40M120DF3 |
STMicroelectronics |
Trench gate field-stop IGBT |
|