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IPG16N10S4-61 |
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| Part Number | IPG16N10S4-61 |
| Manufacturer | Infineon (https://www.infineon.com/) Technologies |
| Description | OptiMOS™-T2 Power-Transistor Features • Dual N-channel Normal Level - Enhancement mode • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • RoHS compliant • 100% Avalanc... |
| Features |
• Dual N-channel Normal Level - Enhancement mode • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • RoHS compliant • 100% Avalanche tested IPG16N10S4-61 Product Summary VDS RDS(on),max3) ID 100 V 61 mW 16 A PG-TDSON-8 87 65 12 34 87 65 Type IPG16N10S4-61 Package PG-TDSON-8 Marking 4N1061 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current one channel active ID T C=25 °C, V GS=10 V Pulsed drain current1) one channel active Avalanche energy, single pulse1, 3) Avalanche current, single pu... |
| Document |
 IPG16N10S4-61 Data Sheet
PDF 253.56KB |
| Distributor | Stock | Price | Buy |
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| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | IPG16N10S4-61A |
Infineon |
Power-Transistor |
|
| 2 | IPG16N10S4L-61A |
Infineon |
Power-Transistor |
|
| 3 | IPG15N06S3L-45 |
Infineon |
Power Transistor |
|
| 4 | IPG20N04S4-08 |
Infineon |
Power Transistor |
|
| 5 | IPG20N04S4-08A |
Infineon |
Power-Transistor |
|