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GA200TS60U |
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| Part Number | GA200TS60U |
| Manufacturer | International Rectifier |
| Description | PD -5.058B PRELIMINARY GA200TS60U Ultra-FastTM Speed IGBT VCES = 600V VCE(on) typ. = 1.8V @VGE = 15V, IC = 200A "HALF-BRIDGE" IGBT INT-A-PAK Features • Generation 4 IGBT technology • UltraFast: Opt... |
| Features |
• Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Very low conduction and switching losses • HEXFRED™ antiparallel diodes with ultra- soft recovery • Industry standard package • UL approved Benefits • Increased operating efficiency • Direct mounting to heatsink • Performance optimized for power conversion: UPS, SMPS, Welding • Lower EMI, requires less snubbing Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C I CM ILM IFM VGE VISOL PD @ TC = 25°C PD @ TC = 85°C TJ TSTG Collector-to-Emitter Voltage... |
| Document |
 GA200TS60U Data Sheet
PDF 303.56KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | GA200TS60UPBF |
Vishay Siliconix |
IGBT |
|
| 2 | GA200TS60UX |
International Rectifier |
Ultra-FastTM Speed IGBT |
|
| 3 | GA200TD120U |
International Rectifier |
HALF-BRIDGE IGBT DOUBLE INT-A-PAK |
|
| 4 | GA200 |
Digitron Semiconductors |
SILICON CONTROLLED RECTIFIERS |
|
| 5 | GA200A |
Digitron Semiconductors |
SILICON CONTROLLED RECTIFIERS |
|